PART |
Description |
Maker |
GT8G136 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
GT20G101SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT8G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT5G133 |
IGBT for strobe flash
|
TOSHIBA
|
GT8G151 |
IGBT for strobe flash
|
TOSHIBA
|
RJP4003ASA-0-Q0 RJP4003ASA |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
RJP4009ANS RJP4009ANS-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
CY25AAJ-8 CY25AAJ-8-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
GT8G121 |
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT5G103 E007772 |
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS) N通道马鞍山型(闪光灯应用 From old datasheet system
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|